Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2005-12-01
2009-11-24
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257S184000, C257S187000, C257S222000, C257S226000, C257SE21521
Reexamination Certificate
active
07622736
ABSTRACT:
It is an object of the present invention to provide a volatile semiconductor device into which data can be additionally written and which is easy to manufacture, and a method for manufacturing the same. It is a feature of the present invention that a semiconductor device includes an element formation layer including a first transistor and a second transistor which are provided over a substrate; a memory element provided over the element formation layer; and a sensor portion provided above the memory element, wherein the memory element has a layered structure including a first conductive layer, and an organic compound layer, and a second conductive layer, the first conductive layer is electrically connected to the first transistor, and the sensor portion is electrically connected to the second transistor.
REFERENCES:
patent: 4860254 (1989-08-01), Pott et al.
patent: 6714392 (2004-03-01), Opolka et al.
patent: 6773929 (2004-08-01), Oh et al.
patent: 6812509 (2004-11-01), Xu
patent: 6818920 (2004-11-01), De Leeuw et al.
patent: 6927437 (2005-08-01), Oh et al.
patent: 2004/0084728 (2004-05-01), Tanabe
patent: 2004/0258866 (2004-12-01), Shiba et al.
patent: 2006/0121308 (2006-06-01), Katoh et al.
patent: 0 236 696 (1987-09-01), None
patent: WO 01/73845 (2001-10-01), None
International Search Report (Application No.PCT/JP2005/022594) dated Mar. 23, 2006.
Written Opinion (Application No. PCT/JP2005/022594) dated Mar. 23, 2006.
Abe Hiroko
Moriya Yoshitaka
Nomura Ryoji
Yukawa Mikio
Louie Wai-Sing
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Semiconductor device and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4052619