Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-02-18
2008-12-09
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S152000, C438S156000, C257SE21001, C257SE21174, C257SE21582
Reexamination Certificate
active
07462514
ABSTRACT:
An object of the present invention is to provide a method for manufacturing a semiconductor device having a semiconductor element capable of reducing a cost and improving a throughput with a minute structure, and further, a method for manufacturing a liquid crystal television and an EL television. According to one feature of the invention, a method for manufacturing a semiconductor device comprises the steps of: forming a light absorption layer over a substrate, forming a first region over the light absorption layer by using a solution, generating heat by irradiating the light absorption layer with laser light, and forming a first film pattern by heating the first region with the heat.
REFERENCES:
patent: 5892562 (1999-04-01), Yamazaki et al.
patent: 6416583 (2002-07-01), Kitano et al.
patent: 6627263 (2003-09-01), Kitano et al.
patent: 6715871 (2004-04-01), Hashimoto et al.
patent: 2002/0136829 (2002-09-01), Kitano et al.
patent: 2002/0146893 (2002-10-01), Shimoda et al.
patent: 2003/0030689 (2003-02-01), Hashimoto et al.
patent: 2003/0083203 (2003-05-01), Hashimoto et al.
patent: 2003/0215634 (2003-11-01), Hattori et al.
patent: 2006/0141619 (2006-06-01), Hattori et al.
patent: 1 087 428 (2001-03-01), None
patent: 2000-188251 (2000-07-01), None
patent: 2001-179167 (2001-07-01), None
patent: WO-2000/028604 (2000-05-01), None
Kuwahara.M et al., “Thermal Lithography for 0.1 μm pattern fabrication,”, Micro Electronic Engineering, 2002, vol. 61-62, pp. 415-421.
Office Action (Application No.200510069742.0; CN7749) Dated Apr. 25, 2008.
Shiroguchi Hiroko
Yamamoto Yoshiaki
Costellia Jeffrey L.
Lebentritt Michael S
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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