Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2006-07-06

2008-12-23

Lee, Calvin (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S275000

Reexamination Certificate

active

07468540

ABSTRACT:
In a semiconductor device including a core transistor and an I/O transistor on the same semiconductor substrate, the core transistor includes a gate insulating film, a gate electrode, sidewalls, extension diffusion layers, and source/drain diffusion layers. The I/O transistor includes a gate insulating film, a gate electrode, sidewalls, and source/drain diffusion layers. In the I/O transistor, the source/drain diffusion region is offset relative to a channel region located beneath the gate insulating film in regions below the sidewalls.

REFERENCES:
patent: 6165825 (2000-12-01), Odake
patent: 6287912 (2001-09-01), Asakura et al.
patent: 6498376 (2002-12-01), Miyagi et al.
patent: 06-204472 (1994-07-01), None
patent: 2002-118255 (2002-04-01), None
patent: 2004-039694 (2004-02-01), None
patent: 2004-533728 (2004-11-01), None
patent: WO 03/003442 (2003-01-01), None

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