Semiconductor device, and method for manufacturing the same

Details Semiconductor device, and method for manufacturing the same Semiconductor device, and method for manufacturing the same

2006-09-26

2008-08-26

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S592000, C438S275000, C438S198000, C257SE21002

Reexamination Certificate

active

07416967

ABSTRACT:
According to an aspect of the invention, a semiconductor device comprises: a N-channel MIS transistor comprising; a p-type semiconductor layer; a first gate insulation layer formed on the p-type semiconductor layer; a first gate electrode formed on the first gate insulation layer; and a first source-drain region formed in the p-type semiconductor layer where the first gate electrode is sandwiched along a direction of gate length. The first gate electrode comprises a crystal phase including a cubic crystal of NiSi2which has a lattice constant of 5.39 angstroms to 5.40 angstroms.

REFERENCES:
patent: 6635521 (2003-10-01), Zhang et al.
patent: 2003/0180994 (2003-09-01), Polishchuk et al.
patent: 2006/0105527 (2006-05-01), Saito
patent: 2005-129551 (2005-05-01), None
Takahashi, et al., “Dual Workfunction Ni-Silicide/HfSiON Gate Stacks by Phase-Controlled Full-Silicidation (PC-FUSI) Technique for 45-nm-node LSTP and LOP Devices”, International Electron Devices Meeting Technical Digest, pp. 4.4.1-4.4.4., (2004).
Biswas, et al., “Work function tuning of nickel silicide by co-sputtering nickel and silicon”, Applied Physics Letters 87, pp. 171908-1-171908-3, (2005).
Nakatsuka, et al., “Low-Temperature Formation of Epitaxial NiSi2Layers with Solid-Phase Reaction in Ni/Ti/Si(001) Systems”, Japanese Journal of Applied Physics, vol. 44, No. 5A, pp. 2945-2947, (2005).
Hayzelden, et al., “Silicide formation and silicide-mediated crystallization of nickel-implanted amorphous silicon thin films”, Journal of Applied Physics 73 (12), pp. 8279-8289, (Jun. 15, 1993).

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