Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2006-07-12

2008-10-21

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

Having specified scribe region structure

C438S113000, C438S458000, C257S620000

Reexamination Certificate

active

07439161

ABSTRACT:
A method for manufacturing a semiconductor device includes forming a first insulating layer on a semiconductor substrate having a semiconductor chip region and a scribe region; forming a mask pattern on the first insulating layer; removing portions of the first insulating layer using the mask pattern so as to form a contact hole in the semiconductor chip region and a scribe region opening exposing the scribe region; forming a metal contact plug in a contact hole and a metal sidewall on a side of the first insulating layer in the scribe region opening; forming a metallization wiring on the first insulating layer; and forming a second insulating layer and a protective layer over the metal contact plug and the metal sidewall so as to cover the semiconductor chip region and the scribe region.

REFERENCES:
patent: 5342495 (1994-08-01), Tung et al.
patent: 5902717 (1999-05-01), Hayakawa
patent: 6153941 (2000-11-01), Maejima
patent: 2002/0000642 (2002-01-01), Lin et al.
patent: 2004/0147097 (2004-07-01), Pozder et al.
patent: 2001057367 (2001-02-01), None
patent: 2001291715 (2001-10-01), None

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