Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having specified scribe region structure
Reexamination Certificate
2006-07-12
2008-10-21
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
Having specified scribe region structure
C438S113000, C438S458000, C257S620000
Reexamination Certificate
active
07439161
ABSTRACT:
A method for manufacturing a semiconductor device includes forming a first insulating layer on a semiconductor substrate having a semiconductor chip region and a scribe region; forming a mask pattern on the first insulating layer; removing portions of the first insulating layer using the mask pattern so as to form a contact hole in the semiconductor chip region and a scribe region opening exposing the scribe region; forming a metal contact plug in a contact hole and a metal sidewall on a side of the first insulating layer in the scribe region opening; forming a metallization wiring on the first insulating layer; and forming a second insulating layer and a protective layer over the metal contact plug and the metal sidewall so as to cover the semiconductor chip region and the scribe region.
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Dongbu Electronics Co. Ltd.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Huynh Andy
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