Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-07-21
2008-10-07
Prenty, Mark (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S300000
Reexamination Certificate
active
07432182
ABSTRACT:
An exemplary method for manufacturing a semiconductor device includes: forming an insulating layer over a semiconductor substrate having a gate insulating layer, a gate, and a spacer, respectively formed thereabove and one or more junction regions formed therein so as to fill a full height of a gap between gates; forming a contact hole partially exposing the junction region(s) by etching the insulating layer; and selectively forming a silicon layer on an exposed portion of the junction region at a bottom of the contact hole.
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Dongbu Electronics Co. Ltd.
Fortney Andrew D.
Prenty Mark
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