Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-08
2008-09-16
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S401000, C257S446000, C257S466000, C257S509000, C257S618000, C257S773000, C257S778000
Reexamination Certificate
active
07425745
ABSTRACT:
A semiconductor device includes a semiconductor substrate, an isolation film that is provided in one principal surface of the semiconductor substrate, wiring that is arranged on the isolation film, a diffusion layer that is formed inside the semiconductor substrate and located in the vicinity of the isolation film, and an insulating film that covers the diffusion layer over the one principal surface of the semiconductor substrate. The insulating film further covers a portion of the isolation film near to the diffusion layer and comes into contact with the side of the wiring near to the diffusion layer.
REFERENCES:
patent: 6025270 (2000-02-01), Yoo
patent: 6333205 (2001-12-01), Rhodes
patent: 6492668 (2002-12-01), Maeda
patent: 6521926 (2003-02-01), Sasaki
patent: 6583438 (2003-06-01), Uchida
patent: 6617241 (2003-09-01), Doan
patent: 2003/0216022 (2003-11-01), Mayuzumi
patent: 2003/0234432 (2003-12-01), Song et al.
patent: 1 139 428 (2001-10-01), None
patent: 4-12568 (1992-01-01), None
patent: 2000-357786 (2000-12-01), None
patent: 2002-190586 (2002-07-01), None
patent: 1998-0084299 (1998-12-01), None
patent: 2001-0093670 (2001-10-01), None
patent: 2003-097648 (2003-12-01), None
Hamre Schumann Mueller & Larson P.C.
Matsushita Electric - Industrial Co., Ltd.
Wojciechowicz Edward
LandOfFree
Semiconductor device and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3989780