Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-11-12
2000-07-18
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257637, 257641, 257900, H01L 2978
Patent
active
060911212
ABSTRACT:
In an LDD structure MOSFET, a protecting multilayer insulating film is formed to cover a gate electrode in order to protect the gate electrode and the gate oxide film from a moisture included in an upper level layer. The protecting multilayer insulating film includes a protecting nitride film for preventing infiltration of moisture, and another protecting insulator film having a compressive stress for relaxing a tensile stress of the protecting nitride film. Thus, it is possible to prevent infiltration of moisture, and simultaneously, it is possible to minimize energy levels for trapping electrons and holes, which would have otherwise been formed within the gate oxide film and at a boundary between the gate oxide film and the semiconductor substrate because of the tensile stress of the protecting nitride film.
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K.H. Kuesters et al., "Self Aligned Bitline Contact for 4 MBIT Dram", pp. 640-649, ULSI Science and Techn., 1987.
Munson Gene M.
NEC Corporation
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