Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond
Reexamination Certificate
2007-01-16
2007-01-16
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Ball or nail head type contact, lead, or bond
C257S781000, C257S784000, C257S775000, C257SE23015, C257SE23020, C257SE23023, C257SE23145, C257SE23145, C257SE21509, C257SE21519
Reexamination Certificate
active
11037262
ABSTRACT:
There is provided a semiconductor device in which the junction strength of land portions and external terminals is increased, the disconnection of the external terminal is surely prevented, and the connection reliability is ensured over an extended period of time. An insulating resin layer which insulates metal wires from one another is formed on a semiconductor element, an end portion of the metal wire is connected to an electrode on the semiconductor element, the other end portion of the metal wire is connected to an external terminal to form a land, the entire surface of the semiconductor element except the connecting portions of the lands is covered with a surface-layer resin layer, and a projection is provided on the top surface of a land portion of at least one of the lands. Because of this, after their soldering, the external terminal holds the perimeter of the projection on the land portion, so that the external terminal can be surely connected to the land portion. As a result, the semiconductor device which ensures their connection reliability over an extended period of time can be obtained.
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Japanese Office Action dated Jul. 4, 2006 with English translation.
Kainou Kazuyuki
Kuwabara Kimihito
Ohtani Katsumi
Yagoh Masatoshi
Clark Jasmine
Stevens Davis Miller & Mosher LLP
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