Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-12-12
2006-12-12
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S184000, C438S185000, C438S230000, C438S231000, C438S285000, C438S303000, C438S431000, C438S635000, C438S743000, C438S757000
Reexamination Certificate
active
07148158
ABSTRACT:
A semiconductor device includes a semiconductor device comprising a semiconductor substrate, source/drain regions formed in the semiconductor substrate, a gate insulation film formed on the semiconductor substrate, a gate electrode formed on the gate insulation film between the source/drain regions, and a gate sidewall spacer formed on side surfaces of the gate electrode, wherein the gate sidewall spacer is composed of silicon oxide containing 0.1–30 atomic % of chlorine.
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Miyano Kiyotaka
Ozawa Yoshio
Saida Shigehiko
Tanaka Masayuki
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Mitchell James M.
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