Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2006-12-05

2006-12-05

Owens, Douglas W. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S344000, C257S327000, C257S335000, C257S374000

Reexamination Certificate

active

07145202

ABSTRACT:
A semiconductor device including a source region and a drain region spaced from each other by a predetermined interval and formed on a main surface of a semiconductor substrate. A gate electrode is formed on the semiconductor substrate. A trench is filled with insulation material and formed in the main surface of the semiconductor substrate between a location under the gate electrode and at least one of the source region and the drain region with a predetermined depth. An LDD is formed along the trench and has an impurity concentration that is lower than that of the source region and the drain region.

REFERENCES:
patent: 5705840 (1998-01-01), Shen et al.
patent: 5929483 (1999-07-01), Kim et al.
patent: 6566216 (2003-05-01), Takahashi
patent: 2004/0033646 (2004-02-01), Tang et al.
Patent Abstracts of Japan, Publication No. 2000-012837, Publication date Jan. 14, 2000.

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