Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
2006-11-21
2006-11-21
Lee, Eddie C. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
C257S777000, C257S787000, C257S675000, C257S690000, C257S737000, C257S706000, C438S106000, C438S126000, C438S107000, C438S127000
Reexamination Certificate
active
07138706
ABSTRACT:
A semiconductor device with excellent heat dissipation characteristics that can achieve a high reliability when mounted in electronic equipment such as a cellular phone or the like and a method for manufacturing the same are provided. The semiconductor device includes a substrate, a plurality of semiconductor chips mounted on the substrate by stacking one on top of another, and an encapsulation resin layer made of encapsulation resin. Among the plurality of semiconductor chips, a first semiconductor chip as an uppermost semiconductor chip is mounted with a surface thereof on which a circuit is formed facing toward the substrate, and the encapsulation resin layer is formed so that at least a surface of the first semiconductor chip opposite to the surface on which the circuit is formed and a part of side surfaces of the first semiconductor chip are exposed to the outside of the encapsulation resin layer.
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Arai Yoshiyuki
Itou Fumito
Takeoka Yoshiaki
Yaguchi Yasutake
Yamauchi Kouichi
Hamre Schumann Mueller & Larson P.C.
Im Junghwa
Lee Eddie C.
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