Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated
Reexamination Certificate
2006-11-07
2006-11-07
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
Reexamination Certificate
active
07132756
ABSTRACT:
A semiconductor device (1) of the present invention includes a semiconductor element (103) including electrode parts (104), and a wiring substrate (108) including an insulation layer (101), electrode-part-connection electrodes (102) provided in the insulation layer (101), and external electrodes (107) that is provided in the insulation layer (101) and that is connected electrically with the electrode-part-connection electrodes (102), in which the electrode parts (104) and the electrode-part-connection electrodes (102) are connected electrically with each other. The insulation layer (101) has an elastic modulus measured according to JIS K6911 of not less than 0.1 GP a and not more than 5 GPa, and the electrodes (104) and the electrode-part-connection electrodes (102) are connected by metal joint.
REFERENCES:
patent: 5926694 (1999-07-01), Chigawa et al.
patent: 6208525 (2001-03-01), Imasu et al.
patent: 6335571 (2002-01-01), Capote et al.
patent: 6590287 (2003-07-01), Ohuchi
patent: 6930388 (2005-08-01), Yamaguchi et al.
patent: 2002/0056906 (2002-05-01), Kajiwara et al.
patent: 2002/0090759 (2002-07-01), Hashimoto
patent: 0 853 337 (1998-07-01), None
patent: 0 907 205 (1999-04-01), None
patent: 9-1881119 (1997-07-01), None
patent: 10-79362 (1998-03-01), None
patent: 11-168112 (1999-06-01), None
patent: 2000-114314 (2000-04-01), None
patent: 2000-150549 (2000-05-01), None
patent: 2001-127108 (2001-05-01), None
patent: 2002-151551 (2002-05-01), None
Asahi Toshiyuki
Komatsu Shingo
Nakatani Seiichi
Sugaya Yasuhiro
Yamamoto Yoshiyuki
Hamre Schumann Mueller & Larson P.C.
Trinh (Vikki) Hoa B.
Weiss Howard
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