Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-01-31
2006-01-31
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S347000, C257S349000, C257S354000
Reexamination Certificate
active
06992358
ABSTRACT:
Disclosed is a semiconductor device comprising an underlying insulating film having a depression, a semiconductor structure which includes a first semiconductor portion having a portion formed on the underlying insulating film and a first overlap portion which overlaps the depression, a second semiconductor portion having a portion formed on the underlying insulating film and a second overlap portion which overlaps the depression, and a third semiconductor portion disposed between the first and second semiconductor portions and having a portion disposed above the depression, wherein overlap width of the first overlap portion and overlap width of the second overlap portion are equal to each other, a gate electrode including a first electrode portion covering upper and side surfaces of the third semiconductor portion and a second electrode portion formed in the depression, and a gate insulating film interposed between the semiconductor structure and the gate electrode.
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Hagishima Daisuke
Hieda Katsuhiko
Matsuzawa Kazuya
Fenty Jesse A.
Thomas Tom
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