Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-04-25
2006-04-25
Blum, David (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S638000, C438S639000
Reexamination Certificate
active
07033935
ABSTRACT:
The invention simplifies the manufacturing processes and increases the yield. A semiconductor wafer equipped with a plurality of semiconductor chip forming sections is prepared. An electrical characteristic examination is conducted for each of the semiconductor chip forming sections to determine good product sections or bad product sections. At least another segmented semiconductor chip is electrically connected to each of the semiconductor chip forming sections that are determined to be good product sections.
REFERENCES:
patent: 3969745 (1976-07-01), Blocker, III
patent: 4016593 (1977-04-01), Konishi et al.
patent: 4494688 (1985-01-01), Hatada et al.
patent: 4696885 (1987-09-01), Vijan
patent: 5843821 (1998-12-01), Tseng
patent: 5918113 (1999-06-01), Higashi et al.
patent: 6114192 (2000-09-01), Tsunoda et al.
patent: 6221769 (2001-04-01), Dhong et al.
patent: 6252266 (2001-06-01), Hoshi et al.
patent: 6333564 (2001-12-01), Katoh et al.
patent: 6358762 (2002-03-01), Kohno et al.
patent: 6358836 (2002-03-01), Lu et al.
patent: 6365513 (2002-04-01), Furukawa et al.
patent: 6388313 (2002-05-01), Lee et al.
patent: 6720641 (2004-04-01), Birdsley et al.
patent: A 5-206286 (1993-08-01), None
patent: A 8-83881 (1996-03-01), None
patent: 40-9153516 (1997-06-01), None
patent: A 10-223833 (1998-08-01), None
S. Wolf and R.N. Touber, Silicon Processing for the VLSI Era, v. 1, 2nd edition, Lattice Press, 2000, p. 784.
Blum David
Doty Heather
Oliff and Berridge, PLC
Seiko Epson Corporation
LandOfFree
Semiconductor device and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3577762