Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2006-05-02

2006-05-02

Owens, Douglas W (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S003000

Reexamination Certificate

active

07038264

ABSTRACT:
A first interlayer insulation film is formed, on which a SiO2cap film is then formed, and degassing of moisture in the first interlayer insulation film and the SiO2cap film is preformed by heat treatment. Then, an Al2O3film is formed on the SiO2cap film. Subsequently, heat treatment is performed on the Al2O3in an oxidation atmosphere, thereby accelerating oxidation of its surface. Thereafter, on the Al2O3film, a platinum film, a PLZT film, and an IrO2film are formed and patterned, thereby forming a ferroelectric capacitor including an upper electrode, a capacity insulation film, and a lower electrode.

REFERENCES:
patent: 6342712 (2002-01-01), Miki et al.
patent: 2004/0094791 (2004-05-01), Ito et al.
patent: 2005/0006680 (2005-01-01), Song et al.
Patent Abstracts of Japan, Publication No. 2002-289793, dated Oct. 4, 2002, Abstract only.

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