Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

1981-11-03

1984-07-10

Powell, William A.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

29576W, 29580, 156643, 156648, 156657, 156662, 148187, 357 50, 427 85, 430313, B05D 512, H01L 21306, B44C 122, C03C 1500

Patent

active

044593252

ABSTRACT:
A method for element isolation utilizing insulating materials in a semiconductor substrate is proposed. In this method an oxidizable material layer of polycrystalline silicon or the like is formed and then the oxidizable material layer is selectively oxidized, using an oxidation-proof mask thereby forming a thick oxide layer. Thereafter, the oxidation-proof mask is removed and unoxidized oxidizable material below the mask is perpendicularly etched off, leaving part of the oxidizable material which is then oxidized to form together with the thick oxide layer an element isolation. This invention further proposes a semi-conductor device having element isolation layer whose bird's beak is very small in length.

REFERENCES:
patent: 3753803 (1973-08-01), Nomura et al.
patent: 4137109 (1979-01-01), Aiken et al.
patent: 4332837 (1982-06-01), Peyre-Lavigne

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