Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2005-02-08

2005-02-08

Lee, Eddie (Department: 2811)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C438S527000, C438S530000, C438S529000, C438S531000, C257S061000, C257S405000

Reexamination Certificate

active

06852610

ABSTRACT:
A semiconductor device includes a gate electrode formed on a semiconductor region via a gate insulative film and an extension high concentration diffusion layer of a first conductivity type formed in the semiconductor region beside the gate electrode. A dislocation loop defect layer is formed in a region of the semiconductor region beside the gate electrode and at a position shallower than an implantation projected range of the extension high concentration diffusion layer.

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patent: 2000-260728 (2000-09-01), None
M.C. Ozturk et al., “Very shallow p+-n junction formation by low-energy BF+2ion implantation into crystalline and germanium preamorphized silicon”, Appl. Phys. Lett. 52 (12), pp. 963-965, Mar. 1988.
Notice of Reasons of Rejection Dated Nov. 18, 2003.

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