Semiconductor device and method for manufacturing the same

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430312, 430325, 430330, G03C 500

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active

058586202

ABSTRACT:
A first resist pattern, which is capable of generating an acid, is formed on a semiconductor device layer. Over the first resist pattern, a layer of a second resist, which is capable of undergoing an cross-linking reaction in the presence of an acid, is formed. Then, a cross-linked film is formed in portions of said layer of the second resist at the boundary with said first resist by action of an acid from said first resist. Thereafter, non-cross-linked portions of said second resist are removed to form a finely isolated resist pattern. The semiconductor device layer is etched, via a mask of said finely isolated resist pattern, to form a fine spaces or holes.

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patent: 5545512 (1996-08-01), Nakato
German Office Action and English translation thereof.
Characterization of Diazonaphthoquinone-Novolac Resin-Type Positive Photoresist for g-line and i-line Exposure using Water-Soluble Contrast Enhancement Materials, M. Endo et al., May 1989, Journal of Vacuum Science Technology, B7 (3), pp. 565-568.
New Water-Soluble Contrast Enhancing Material for I-Line Lithography, M. Endo et al., Journal of the Electrochemical Society, vol. 136, No. 2, Feb. 1989, pp. 508-511.
Proceedings of SPIE--The International Society for Optical Engineering , vol. 923, 1988, pp. 158-171.
Proceedings of SPIE--The International Society for Optical Engineering, vol. 1086, 1989, pp. 34-47.

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