Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-11-01
2005-11-01
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S347000, C257S348000, C438S149000, C438S479000, C438S517000, C345S092000, C345S093000, C345S094000, C345S095000, C345S096000, C345S097000, C345S098000
Reexamination Certificate
active
06960787
ABSTRACT:
There is provided a semiconductor device having TFTs whose thresholds can be controlled.There is provided a semiconductor device including a plurality of TFTs having a back gate electrode, a first gate insulation film, a semiconductor active layer a second gate insulation film and a gate electrode, which are formed on a substrate, wherein an arbitrary voltage is applied to the back gate electrode.
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Koyama Jun
Nakajima Setsuo
Sakamoto Naoya
Yamazaki Shunpei
Ortiz Edgardo
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Wilson Allan R.
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