Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Patent
1997-11-14
1999-11-09
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
257752, 257758, 257771, H01L 2348, H01L 2352, H01L 2940
Patent
active
059820403
ABSTRACT:
A semiconductor device includes a semiconductor substrate having a main surface, and a multi-layered wiring layer formed on the main surface of the semiconductor substrate, the multi-layered wiring layer having a plurality of wiring layers insulatively laminated, wherein the melting points of the plurality of wiring layers are set gradually lower in a direction towards the higher-level side.
REFERENCES:
patent: 4617193 (1986-10-01), Wu
patent: 5294837 (1994-03-01), Takase et al.
patent: 5327011 (1994-07-01), Iwamatsu
patent: 5726499 (1998-03-01), Irinoda
Anand Minakshisundaran Balasubramanian
Shibata Hideki
Yamada Masaki
Clark Jhihan B
Kabushiki Kaisha Toshiba
Saadat Mahshid
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