Semiconductor device and method for manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

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Details

257752, 257758, 257771, H01L 2348, H01L 2352, H01L 2940

Patent

active

059820403

ABSTRACT:
A semiconductor device includes a semiconductor substrate having a main surface, and a multi-layered wiring layer formed on the main surface of the semiconductor substrate, the multi-layered wiring layer having a plurality of wiring layers insulatively laminated, wherein the melting points of the plurality of wiring layers are set gradually lower in a direction towards the higher-level side.

REFERENCES:
patent: 4617193 (1986-10-01), Wu
patent: 5294837 (1994-03-01), Takase et al.
patent: 5327011 (1994-07-01), Iwamatsu
patent: 5726499 (1998-03-01), Irinoda

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