Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2005-03-29

2005-03-29

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S388000, C257S413000

Reexamination Certificate

active

06873022

ABSTRACT:
In a gate electrode, above a first polycrystalline silicon film, a second polycrystalline silicon film, which has a predetermined silicon crystal face orientation directed with respect to and is smaller in crystal diameter than the first polycrystalline silicon film, is provided, so that even if there locally exist portions which are different in silicidization speed in forming a silicide layer in the second polycrystalline silicon film, the silicidization reaction with unreacted portions of the second polycrystalline silicon film can occur faster than the silicidization reaction with the first polycrystalline silicon film.

REFERENCES:
patent: 5903053 (1999-05-01), Iijima et al.
patent: 432509 (2001-05-01), None
Patent Abstracts of Japan, Publication No. 10-209296, published Aug. 7, 1998./Discussed in the specification.
Patent Abstracts of Japan, Publication No. 7-37992, published Feb. 7, 1995./Discussed in the specification.

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