Semiconductor device, and method for manufacturing the same

Details Semiconductor device, and method for manufacturing the same Semiconductor device, and method for manufacturing the same

2005-01-04

2005-01-04

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S225000, C438S297000, C438S362000, C438S425000, C438S369000

Reexamination Certificate

active

06838326

ABSTRACT:
The present invention discloses semiconductor device which comprises a metal gate electrode surrounded by polysilicon layers and a gate insulating film whose edges are thicker than the center portion formed according to a reoxidation process using a thermal process before the formation of an ion implantation region in a process for forming the metal gate electrode using a replacement process and method for manufacturing the same.

REFERENCES:
patent: 6017823 (2000-01-01), Shishiguchi et al.
patent: 6528854 (2003-03-01), Yoshida et al.

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