Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2005-05-31
2005-05-31
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S109000, C257S281000, C438S169000, C438S534000
Reexamination Certificate
active
06900483
ABSTRACT:
A Schottky diode includes a semiconductor substrate made of 4H—SiC, an epitaxially grown 4H—SiC layer, an ion implantation layer, a Schottky electrode, an ohmic electrode, and an insulative layer made of a thermal oxide film. The Schottky electrode and the insulative layer are not in contact with each other, with a gap being provided therebetween, whereby an altered layer does not occur. Therefore, it is possible to suppress the occurrence of a leak current.
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Kitabatake Makoto
Kusumoto Osamu
Miyanaga Ryoko
Takahashi Kunimasa
Uchida Masao
Harness & Dickey & Pierce P.L.C.
Louie Wai-Sing
Matsushita Electric - Industrial Co., Ltd.
Pham Long
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