Semiconductor device, and method for manufacturing the same

Details Semiconductor device, and method for manufacturing the same Semiconductor device, and method for manufacturing the same

2005-01-18

2005-01-18

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000

Reexamination Certificate

active

06844602

ABSTRACT:
The present invention discloses semiconductor device which comprises a metal gate electrode surrounded by polysilicon layers and a gate insulating film whose edges are thicker than the center portion formed according to a reoxidation process using a thermal process before the formation of an ion implantation region in a process for forming the metal gate electrode using a replacement process and method for manufacturing the same.

REFERENCES:
patent: 5661052 (1997-08-01), Inoue et al.
patent: 5759899 (1998-06-01), Saito
patent: 5972757 (1999-10-01), Ema
patent: 6017823 (2000-01-01), Shishiguchi et al.
patent: 6174776 (2001-01-01), Hao et al.
patent: 6528854 (2003-03-01), Yoshida et al.
patent: 6689654 (2004-02-01), Kim et al.
patent: 6707082 (2004-03-01), Haneder et al.
patent: 2000-58818 (2000-02-01), None

Affiliated with

Also associated with

Rating

Semiconductor device, and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device, and method for manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3373007