Semiconductor device and method for manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S391000, C257SE27048, C257SE29346

Reexamination Certificate

active

07402889

ABSTRACT:
Disclosed is a metal-insulator-metal (MIM) capacitor structure formed by a metal interconnection process of trench-exposed metal layers formed on stacked interlayer insulating layers. The MIM capacitor uses a conductive layer conformally formed on the metal interconnection and/or trench regions to enlarge constituent electrode surface areas.

REFERENCES:
patent: 6534374 (2003-03-01), Johnson et al.
patent: 6569746 (2003-05-01), Lee et al.
patent: 6597032 (2003-07-01), Lee
patent: 6847077 (2005-01-01), Thomas et al.
patent: 6897508 (2005-05-01), Sneh
patent: 6903398 (2005-06-01), Yamamoto
patent: 7214957 (2007-05-01), Ryoo et al.
patent: 7230292 (2007-06-01), Graettinger
patent: 2004/0137693 (2004-07-01), Kim
patent: 2003-045967 (2003-02-01), None
patent: 1020030049000 (2003-06-01), None
patent: 1020040059410 (2004-07-01), None
patent: 498528 (2002-08-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2770316

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.