Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2011-08-16

2011-08-16

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE47001, C257SE21409, C438S268000

Reexamination Certificate

active

07999316

ABSTRACT:
Disclosed is a vertically arranged semiconductor device. The semiconductor device can include a semiconductor substrate comprising a first conductive type buried layer, a first conductive type drift region formed on the first conductive type buried layer, and a second conductive type well formed on the first conductive type drift region. A gate insulating layer and a gate electrode can be formed in regions of the substrate from which the first conductive type drift region and the second conductive type well are selectively removed. A first conductive type source region can be formed at sides of the gate electrode. A n insulating layer can be formed on the semiconductor substrate including the gate electrode and can include a trench formed through the insulating layer and a portion of the second conductive type well. A barrier layer can be formed in the trench and a source contact including tungsten and aluminum can be deposited in the trench. A drain electrode layer can be formed on a bottom surface of the substrate below the first conductive type buried layer.

REFERENCES:
patent: 7816729 (2010-10-01), Hshieh
patent: 2008/0303081 (2008-12-01), Hshieh

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