Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2011-03-01

2011-03-01

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S329000, C257S341000, C257S396000, C257SE29185

Reexamination Certificate

active

07898024

ABSTRACT:
In a MIS-type semiconductor device having a trench gate structure, a withstand voltage is ensured without changing the thickness of a drift layer and on-resistance can be reduced without applying a high gate drive voltage. The lower half of a trench extending through a p-base region into an n-drift region is filled with a high-permittivity dielectric having a relative permittivity that is higher than that of a silicon oxide film, preferably a silicon nitride film, and an insulated gate structure including a gate insulator and a gate electrode is fabricated on the high-permittivity dielectric. The depth d2of the deepest portion of the high-permittivity dielectric is designed to be deeper than the depth d1of a depletion layer in the semiconductor region away from the high-permittivity dielectric.

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Bhatnagar et al.; “Analysis of Silicon Carbide Power Device Performance”; IEEE, 1991 CH2987-6/91/0000-0176; Raleigh NC USA.
Notice on the First Action issued in corresponding Chinese Patent Application No. 200810005436.4 dated Jul. 19, 2010.

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