Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-03-08
2011-03-08
Sefer, A. (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C439S149000, C257SE29147, C257SE29295
Reexamination Certificate
active
07902003
ABSTRACT:
An image display device capable of high-resolution and smooth moving image display, equipped with TFTs in an n-type (or p-type) semiconductor layer with a high on-off ratio and a low resistance. In polysilicon crystallization by laser annealing, an n-type (or p-type) semiconductor layer with a low resistance is produced by performing the following processes in order: implanting nitrogen (N) ions into an amorphous silicon precursor semiconductor film; laser crystallization; implanting n-type (or p-type) dopant ions; and annealing for dopant activation. When fabricating TFTs, this low-resistance semiconductor layer is used to form a source and a drain. Since C, N, and O impurities decrease the mobility of the TFTs, polysilicon is used in which the contaminants concentrations meet the following conditions: carbon concentration ≦3×1019cm−3, nitrogen concentration ≦5×1017cm−3, and oxygen concentration ≦3×1019cm−3.
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12.4L Late-News paper: Selectively Enlarging laser Crystallization; Technology for High and Uniform Performance Poly-Si TFTs; M. Hatano et al.
Hatano Mutsuko
Ouchi Kiyoshi
Sato Takeshi
Tai Mitsuharu
Antonelli, Terry Stout & Kraus, LLP.
Hitachi Displays Ltd.
Sefer A.
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