Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2011-08-16

2011-08-16

Dickey, Thomas L (Department: 2893)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C977S742000

Reexamination Certificate

active

07998850

ABSTRACT:
Disclosed herein are a semiconductor device and a method for manufacturing the same. The method includes forming a gate structure using a carbon nano tube (CNT). In order to prevent reduction of the gate resistance and the short channel effect, a CNT gate having a grown CNT pattern with a half-cylinder shape is formed over a recess of a semiconductor substrate. The CNT gate has the same effect as a recess gate, and can prevent the short channel effect, improve the speed, and the lower power characteristic of semiconductor devices.

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M. Quirk et al., “Semiconductor manufacturing technology”, 2001, Printice-Hall. Inc, pp. 435-445, Table 16.5).

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