Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-19
2011-04-19
Toledo, Fernando L (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S173000, C438S270000, C438S268000, C438S587000, C438S586000, C438S294000, C257SE21159, C257SE21240, C257SE21300, C257SE21410, C257S302000, C257S754000, C257SE29266, C257SE21450, C257SE29262
Reexamination Certificate
active
07928506
ABSTRACT:
The semiconductor device comprises a word line and a bit line. The word line comprises a gate electrode and a first metal interconnect. The first metal interconnect has contact with the gate electrode and extends into a region upper than a first impurity-diffused region in a first direction. The bit line comprises a connecting part and a second metal interconnect. The connecting part is formed so as to have contact with at least part of the side surface of the first impurity-diffused region. The second metal interconnect has contact with the connecting part and extends into a region lower than the semiconductor region in a second direction orthogonal to the first direction.
REFERENCES:
patent: 4740826 (1988-04-01), Chatterjee
patent: 5006909 (1991-04-01), Kosa
patent: 5177576 (1993-01-01), Kimura et al.
patent: 5208172 (1993-05-01), Fitch et al.
patent: 5376562 (1994-12-01), Fitch et al.
patent: 5414288 (1995-05-01), Fitch et al.
patent: 5545586 (1996-08-01), Koh
patent: 5612559 (1997-03-01), Park et al.
patent: 5670803 (1997-09-01), Beilstein et al.
patent: 6034389 (2000-03-01), Burns et al.
patent: 6072209 (2000-06-01), Noble et al.
patent: 6107660 (2000-08-01), Yang et al.
patent: 6518112 (2003-02-01), Armacost et al.
patent: 6624032 (2003-09-01), Alavi et al.
patent: 6677205 (2004-01-01), Beintner
patent: 6699750 (2004-03-01), Rupp
patent: 6858893 (2005-02-01), Ishibashi
patent: 7056783 (2006-06-01), Layman et al.
patent: 7056832 (2006-06-01), Chang et al.
patent: 7141476 (2006-11-01), Dao
patent: 7696559 (2010-04-01), Arai et al.
patent: 2003/0082875 (2003-05-01), Lee
patent: 2003/0151068 (2003-08-01), Ishibashi
patent: 2007/0210374 (2007-09-01), Wu
patent: 2007/0296045 (2007-12-01), Tanaka
patent: 2008/0048219 (2008-02-01), Brar et al.
patent: 2008/0099815 (2008-05-01), Sun
patent: 2009/0127586 (2009-05-01), Gruening-von Schwerin
patent: 10-313100 (1998-11-01), None
patent: 2002-94027 (2002-03-01), None
patent: 2005-260014 (2005-09-01), None
Elpida Memory Inc.
Singal Ankush k
Sughrue & Mion, PLLC
Toledo Fernando L
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