Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-19
2011-04-19
Tran, Thien F (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S292000
Reexamination Certificate
active
07928483
ABSTRACT:
A hard mask material film is formed on a semiconductor substrate and a recess is formed immediately below an opening in an upper surface of the semiconductor substrate. Next, a p-type region is formed immediately below the recess by implanting impurities into an imaging region using the hard mask material film as a mask. Moreover, a trench is formed by further processing the recess in a processing region. A half-buried dielectric film and a STI are formed by burying a dielectric material in the recess and the trench to remove the hard mask material film. Next, two electrodes are formed so as to overlap the half-buried dielectric film and the STI, respectively, and impurities are implanted into the imaging region using one electrode and the half-buried dielectric film as a mask, and hence a n-type region constituting a photodiode is formed in a region being in contact with the p-type region in the semiconductor substrate.
REFERENCES:
patent: 6096612 (2000-08-01), Houston
patent: 2002/0187581 (2002-12-01), Yang
patent: 2006/0118917 (2006-06-01), Gong et al.
patent: 2006-24786 (2006-01-01), None
patent: 2006-93319 (2006-04-01), None
Itonaga et al.; “A High-Performance and Low-Noise CMOS Image Sensor With an Expanding Photodiode Under the Isolation Oxide”, IEEE, 0-78039269-8, 4 sheets, (2005).
Notification of the First Office Action issued by the Chinese Patent Office on Apr. 14, 2010, for Chinese Patent Application No. 200910004715.3, and English-language translation thereof.
Notification of Reason(s) for Refusal issued by the Japanese Patent Office on Feb. 4, 2011, for Japanese Patent Application No. 2008-042010, and English-language translation thereof.
Murakoshi Atsushi
Yahashi Katsunori
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Tran Thien F
LandOfFree
Semiconductor device and method for manufacturing same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method for manufacturing same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2634677