Semiconductor device and method for manufacturing same

Details Semiconductor device and method for manufacturing same Semiconductor device and method for manufacturing same

2011-07-19

2011-07-19

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S151000, C438S301000, C438S585000, C438S783000

Reexamination Certificate

active

07981811

ABSTRACT:
A base layer is formed on an insulating substrate, and a semiconductor layer is formed in localized fashion thereon. A gate insulating film is then formed so as to cover the semiconductor layer, and a gate electrode is formed on a portion of the gate insulating film. An impurity is then implanted into the semiconductor layer via the gate insulating film, and a source region, a drain region, and an LDD region are formed. The gate insulating film is etched with dilute hydrofluoric acid. An electrode-protecting insulating film is then formed so as to cover the gate electrode, and the entire surface of the surface layer portion of the electrode-protecting insulating film is etched away using dilute hydrofluoric acid. Carrier traps introduced into the electrode-protecting insulating film and the gate insulating film are thereby removed.

REFERENCES:
patent: 5187551 (1993-02-01), Shoji et al.
patent: 6396077 (2002-05-01), Kubota et al.
patent: 6461907 (2002-10-01), Imai
patent: 6818496 (2004-11-01), Dennison et al.
patent: 7374981 (2008-05-01), Yamaguchi et al.
patent: 2004/0132293 (2004-07-01), Takayama et al.
patent: 2005/0012151 (2005-01-01), Yamaguchi et al.
patent: 10-27911 (1998-01-01), None
patent: 3177360 (2001-04-01), None
patent: 2004140407 (2004-05-01), None

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