Semiconductor device and method for manufacturing same

Details Semiconductor device and method for manufacturing same Semiconductor device and method for manufacturing same

2008-06-09

2011-10-11

Clark, Jasmine (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S690000, C257S698000, C257S750000, C257S758000, C257SE23063, C257SE23169

Reexamination Certificate

active

08035217

ABSTRACT:
A transparent board is positioned on a support board provided with a positioning mark, and a release material is provided. A semiconductor element is then positioned so that the electrode element faces upward, and the support board is then removed. An insulating resin is then formed on the release material so as to cover the semiconductor element; and a via, a wiring layer, an insulation layer, an external terminal, and a solder resist are then formed. The transparent board is then peeled from the semiconductor device through the use of the release material. A chip can thereby be mounted with high precision, there is no need to provide a positioning mark during mounting of the chip on the substrate in the manufacturing process, and the substrate can easily be removed. As a result, a semiconductor device having high density and a thin profile can be manufactured at low cost.

REFERENCES:
patent: 5355283 (1994-10-01), Marrs et al.
patent: 5436203 (1995-07-01), Lin
patent: 6982478 (2006-01-01), Nakamura
patent: 7208827 (2007-04-01), Hauser et al.
patent: 7563650 (2009-07-01), Nishikawa
patent: 7723838 (2010-05-01), Takeuchi et al.
patent: 1768557 (2006-05-01), None
patent: 2001-237362 (2001-08-01), None
patent: 2001-250902 (2001-09-01), None
patent: 2002-016173 (2002-01-01), None
Chinese Official Action—200810125539.4—Dec. 27, 2010.

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