Semiconductor device and method for manufacturing same

Details Semiconductor device and method for manufacturing same Semiconductor device and method for manufacturing same

2007-08-06

2010-11-09

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27097, C257SE21646, C438S239000

Reexamination Certificate

active

07829925

ABSTRACT:
In a conventional semiconductor device, an excessive etching occurs in a section where an opening for contact plug is formed, causing a damage to a diffusion layer located under the opening.A semiconductor device1includes a region D1for forming an electric circuit, and a seal ring30(guard ring) that surrounds the region D1for forming the electric circuit. A DRAM40is formed in the region D1for forming the electric circuit. Interlayer insulating films22, 24, 26and28are formed on a semiconductor substrate10. The seal ring30is formed in the interlayer insulating films22, 24, 26and28, and at least a portion there of is located spaced apart from the semiconductor substrate10.

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