Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-23
2010-12-28
Blum, David S (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S407000, C257S411000, C257SE21161, C257SE21199, C257SE21632, C257SE29255
Reexamination Certificate
active
07859059
ABSTRACT:
There is provided a semiconductor device having excellent device characteristics and reliability in which Vthvalues of an nMOS transistor and a pMOS transistor are controlled to be values necessary for a low-power device. The semiconductor device includes a pMOS transistor and an nMOS transistor formed by using an SOI substrate. The pMOS transistor is a fully depleted MOS transistor including a first gate electrode comprising at least one type of crystalline phase selected from the group consisting of a WSi2crystalline phase, an MoSi2crystalline phase, an NiSi crystalline phase, and an NiSi2crystalline phase as silicide region (1). The nMOS transistor is a fully depleted MOS transistor comprising at least one type of crystalline phase selected from the group consisting of a PtSi crystalline phase, a Pt2Si crystalline phase, an IrSi crystalline phase, an Ni2Si crystalline phase, and an Ni3Si crystalline phase as silicide region (2).
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Blum David S
NEC Corporation
Young & Thompson
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