Semiconductor device and method for manufacturing same

Details Semiconductor device and method for manufacturing same Semiconductor device and method for manufacturing same

2007-02-16

2010-10-19

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S292000

Reexamination Certificate

active

07816748

ABSTRACT:
The absorption of moisture from a wall surface of an apertured part formed in an interlayer insulating film in accordance with a light-receiving part of a light detector is minimized and deterioration of wiring in the interlayer insulating film is prevented. A position that corresponds to a light-receiving part52of a wiring-structure layer90obtained by layering an Al layer and an interlayer insulating film composed of SOG or another material is etched, and an apertured part120is formed. A silicon nitride film130is then deposited on a side-wall surface and bottom surface of the apertured part120via CVD. The silicon nitride layer130prevents moisture from infiltrating the wiring-structure layer90.

REFERENCES:
patent: 5552616 (1996-09-01), Kobayashi
patent: 6861686 (2005-03-01), Lee et al.
patent: 2004/0140564 (2004-07-01), Lee et al.
patent: 2007/0072326 (2007-03-01), Zheng et al.
patent: 2004-0065963 (2004-07-01), None

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