Semiconductor device and method for manufacturing same

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Reexamination Certificate

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C257S758000, C257SE23011

Reexamination Certificate

active

07633167

ABSTRACT:
A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device100includes: a silicon substrate101; a through electrode129extending through the silicon substrate101; and a first insulating ring130provided in a circumference of a side surface of the through electrode129and extending through the semiconductor substrate101. In addition, the semiconductor device100also includes a protruding portion146, being provided at least in the vicinity of a back surface of a device-forming surface of the semiconductor substrate101so as to contact with the through electrode129, and protruding in a direction along the surface of the semiconductor substrate101toward an interior of the through electrode129.

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patent: 6184060 (2001-02-01), Siniaguine
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patent: 2001/0010991 (2001-08-01), Moradi et al.
patent: 2003/0160325 (2003-08-01), Yoneda et al.
patent: 2004/0061238 (2004-04-01), Sekine
patent: 2006/0006503 (2006-01-01), Farnworth
patent: 60-140850 (1985-07-01), None
patent: WO03065450 (2003-08-01), None

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