Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2006-09-28
2009-12-15
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S758000, C257SE23011
Reexamination Certificate
active
07633167
ABSTRACT:
A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device100includes: a silicon substrate101; a through electrode129extending through the silicon substrate101; and a first insulating ring130provided in a circumference of a side surface of the through electrode129and extending through the semiconductor substrate101. In addition, the semiconductor device100also includes a protruding portion146, being provided at least in the vicinity of a back surface of a device-forming surface of the semiconductor substrate101so as to contact with the through electrode129, and protruding in a direction along the surface of the semiconductor substrate101toward an interior of the through electrode129.
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Kawano Masaya
Soejima Koji
Takahashi Nobuaki
NEC Electronics Corporation
Parekh Nitin
Young & Thompson
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