Semiconductor device and method for manufacturing same

Details Semiconductor device and method for manufacturing same Semiconductor device and method for manufacturing same

2007-03-13

2007-03-13

Trinh, Michael (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000

Reexamination Certificate

active

11078477

ABSTRACT:
There is provided a technique for obtaining improved maximum allowed value for the antenna ratio while inhibiting the damage on the gate insulating film of the MOSFET. A semiconductor device having a configuration that comprises a silicon substrate, a contact interlayer film, a first interconnect interlayer film, a first via interlayer film and a second interconnect interlayer film, all of which are sequentially formed in this order, comprises two protective diodes, which are coupled to a MOSFET via the second interconnect.

REFERENCES:
patent: 5466971 (1995-11-01), Higuchi
patent: 6344368 (2002-02-01), Pan
patent: 2000-323582 (2000-11-01), None
G. Cellere et al., “Influence of process parameters on plasma damage during inter-metal dielectric deposition,” Microelectronic Engineering, 71, 2004, pp. 133-138.

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