Semiconductor device and method for manufacturing same

Details Semiconductor device and method for manufacturing same Semiconductor device and method for manufacturing same

2011-03-08

2011-03-08

Dang, Trung (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21632, C257SE27062, C438S233000

Reexamination Certificate

active

07902610

ABSTRACT:
A semiconductor device including an N-channel insulated gate field effect transistor and a P-channel insulated gate field effect transistor, the device having: a first insulating layer and a second insulating layer; and gate electrode contact plugs. Each of the gate electrodes of the N-channel insulated gate field effect transistor and the P-channel insulated gate field effect transistor is buried in a gate electrode formation opening provided in the first insulating layer.

REFERENCES:
patent: 7714393 (2010-05-01), Tai et al.
patent: 2005-294799 (2005-10-01), None
patent: 2005-347631 (2005-12-01), None
patent: 2006-005087 (2006-01-01), None
patent: 2006-114591 (2006-04-01), None

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