Semiconductor device and method for manufacturing partial...

Details Semiconductor device and method for manufacturing partial... Semiconductor device and method for manufacturing partial...

2005-10-18

2005-10-18

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S197000, C257S350000, C257S351000

Reexamination Certificate

active

06956265

ABSTRACT:
There is closed a semiconductor device which comprises a semiconductor substrate including an SOI region where a first insulating film is buried, and a non-SOI region, the semiconductor substrate being provided with a boundary region formed between the SOI region and the non-SOI region and having a second insulating film buried therein, the second insulating film being inclined upward from the SOI region side toward the non-SOI region side, the second insulating film having a thickness smaller than the thickness of the first insulating film and being tapered from the SOI region side to the non-SOI region side, a pair of element isolating insulating regions separately formed in the non-SOI region of semiconductor substrate and defining element regions, a pair of impurity diffusion regions formed in the element regions, and a gate electrode formed via a gate insulating film in the element region of the semiconductor substrate.

REFERENCES:
patent: 5399507 (1995-03-01), Sun
patent: 6063652 (2000-05-01), Kim
patent: 6531754 (2003-03-01), Nagano et al.
patent: 6835981 (2004-12-01), Yamada et al.
patent: 11-150182 (1999-06-01), None

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