Semiconductor device and method for manufacturing of same

Details Semiconductor device and method for manufacturing of same Semiconductor device and method for manufacturing of same

2009-12-23

2011-11-29

Parekh, Nitin (Department: 2811)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S652000, C438S656000, C438S687000, C438S688000, C257SE21589

Reexamination Certificate

active

08067310

ABSTRACT:
A method for manufacturing a semiconductor device, includes: forming a first metal layer on a semiconductor substrate, the semiconductor substrate including a diffusion layer; forming an insulating layer having an opening on the first metal layer; forming a second metal layer on the first metal layer in the opening of the insulating layer; removing the insulating layer; covering an exposed surface of the second metal layer with a third metal layer, the third metal layer including a metal having an ionization tendency lower than that of the second metal layer; and forming an electrode interconnect including the first metal layer, the second metal layer, and the third metal layer by removing the first metal layer using the third metal layer as a mask.

REFERENCES:
patent: 5789320 (1998-08-01), Andricacos et al.
patent: 5968711 (1999-10-01), Lee et al.
patent: 6376374 (2002-04-01), Stevens
patent: 6541372 (2003-04-01), Wege et al.
patent: 6847117 (2005-01-01), Nakatani
patent: 6887789 (2005-05-01), Stevens
patent: 6936923 (2005-08-01), Lin et al.
patent: 7795128 (2010-09-01), Nakatani
patent: 2002/0022355 (2002-02-01), Kim
patent: 2002/0100980 (2002-08-01), Sugiyama et al.
patent: 2003/0192859 (2003-10-01), Uematsu et al.
patent: 2000-150518 (2000-05-01), None
patent: 2003-23236 (2003-01-01), None
patent: 2008-258499 (2008-10-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method for manufacturing of same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for manufacturing of same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing of same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4307776