Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-09-19
2010-10-26
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257S326000, C257S411000, C257SE29309, C257S029000, C257SE21423, C257SE21409, C438S287000
Reexamination Certificate
active
07821059
ABSTRACT:
In a semiconductor device, the side walls are made of SiO2, SiN or SiON, and the top insulating film or gate insulating film is made of an oxide including Al, Si, and metal element M so that the number ratio Si/M is set to no less than a number ratio Si/M at a solid solubility limit of SiO2composition in a composite oxide including metal element M and Al and set to no more than a number ratio Si/M at the condition that the dielectric constant is equal to the dielectric constant of Al2O3and so that the number ratio Al/M is set to no less than a number ratio Al/M where the crystallization of an oxide of said metal element M is suppressed due to the Al element and set to no more than a number ratio Al/M where the crystallization of the Al2O3is suppressed due to the metal element M.
REFERENCES:
patent: 6562491 (2003-05-01), Jeon
patent: 7053455 (2006-05-01), Koike et al.
patent: 7294547 (2007-11-01), Orimoto et al.
patent: 7365389 (2008-04-01), Jeon et al.
patent: 2006/0157754 (2006-07-01), Jeon et al.
patent: 2006/0289895 (2006-12-01), Kamata
patent: 2009/0057751 (2009-03-01), Ariyoshi et al.
patent: 2009/0057753 (2009-03-01), Ino
patent: 2009/0206393 (2009-08-01), Ariyoshi et al.
patent: 2009/0242958 (2009-10-01), Kikuchi et al.
patent: 2009/0242963 (2009-10-01), Shingu et al.
patent: 2001-77111 (2001-03-01), None
patent: 2003-68897 (2003-03-01), None
patent: 2006-203200 (2006-08-01), None
Mazza et al., Study On The A12O3-SiO2-La2O3 Ternary System at 1300° C, Materials Research Bulletin, vol. 34, No. 9, 1999, pp. 1375-1382.
U.S. Appl. No. 12/506,588, filed Jul. 21, 2009, Takashima, et al.
U.S. Appl. No. 12/193,251, filed Aug. 18, 2008, Tsunehiro Ino.
U.S. Appl. No. 12/199,036, filed Aug. 27, 2008, Keiko Ariyoshi, et al.
U.S. Appl. No. 12/142,373, filed Jun. 19, 2008, Shoko Kikuchi, et al.
D. Mazza, et al., “Study on the Al2O3-SiO2-La2O3Ternary System At 1300° C”, Materials Research Bulletin, vol. 34, No. 9, 1999, pp. 1375-1382.
Lin Li, et al., “Phase Diagram Prediction of the Al2O3-SiO2-La2O3System”, J. Mater. Sci, Technol., vol. 15, No. 4, 1999, pp. 439-443.
V. Kahlenberg, et al., “LaAlSiO5: a mixed anion rare earth alumosilicate”, Institut für Mineralogie and Petrographie, Universität Innsbruck, Innrain 52, A-6020 Innsbruck, 1 page, 2003.
Daniel J. Lichtenwalner, et al., “Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction”, Journal of Applied Physics, vol. 98, 2005, pp. 024314-1 to 024314-6.
D. H. Triyoso, et al., “Evaluation of lanthanum based gate dielectrics deposited by atomic layer deposition”, J. Vac. Sci. Technol. B, vol. 23, No. 1, Jan./Feb. 2005, pp. 288-297.
J.-P. Maria, et al., “High temperature stability in lanthanum and zirconia-based gate dielectrics”, Journal of Applied Physics, vol. 90, No. 7, Oct. 1, 2001, pp. 3476-3482.
M. Copel, et al., “Formation of a stratified lanthanum silicate dielectric by reaction with Si(001)”, Applied Physics Letters, vol. 78, No. 11, Mar. 12, 2001, pp. 1607-1609.
J. S. Jur, et al., “High temperature stability of lanthanum silicate dielectric on Si (001)”, Applied Physics Letters, vol. 90, 2007, pp. 102908-1 to 102908-3.
S. Stemmer, et al., “Structure and stability of La2O3/SiO2layers on Si(001)”, Applied Physics Letters, vol. 79, No. 1, Jul. 2, 2001, pp. 102-104.
Ryota Fujitsuka, et al., “Thermal Stability and Electrical Properties of (La2O3)1-x(Al2O3)xComposite Films”, Japanese Journal of Applied Physics, vol. 44, No. 4B, 2005, pp. 2428-2432.
Ryota Fujitsuka, et al., “Thermal Stability and Electrical Properties of (La2O3)1-x(Al2O3)xComposite Films”, Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials, P5-9, 2004, pp. 528-529.
Crystal Data Determinative Table Third Edition vol. II: Inorganic Compounds, 7 pages, 1972.
A. Besmehn, et al., “Surface characterisation and interface studies of high-k materials by XPS and TOF-SIMS”, Applied Surface Science, vol. 252, 2005, pp. 172-176.
Phase Diagram for Ceramists (The American Ceramic Society), pp. 102, 107, 141, 104, 106, 101, and 165, 1995.
Ino Tsunehiro
Kikuchi Shoko
Muraoka Koichi
Shingu Masao
Takashima Akira
Joy Jeremy J
Kabushiki Kaisha Toshiba
Oblon, Spivak, McClelland, Maier & Neaustadt, L.L.P.
Smith Zandra
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