Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond
Reexamination Certificate
2011-03-15
2011-03-15
Luu, Chuong A. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Die bond
C257S780000, C257SE23142
Reexamination Certificate
active
07906856
ABSTRACT:
A semiconductor device has a semiconductor chip provided with an insulating layer formed so as to be thinner in a first secondary-wire-free area than in a first secondary-wire-containing area. Further, the semiconductor chip has an edge extending further outward than a side wall, which severs as an edge of an upper insulating layer, in an extending direction of a circuit-forming surface of the semiconductor chip on which electrode pads are provided. This makes it possible to provide a semiconductor device capable of suppressing electromagnetic interference between a secondary wire and an electronic circuit of a semiconductor chip and the curvature of a wafer even in the case of overlap between the secondary wire and the electronic circuit, and of reducing the risk of occurrence of chipping in a dicing step.
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Doan Nga
Luu Chuong A.
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
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