Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-09-20
2010-12-28
Lee, Eugene (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S680000, C438S681000, C438S787000, C257SE21625, C257SE21639, C117S088000, C117S104000, C117S105000, C427S255280, C427S255370
Reexamination Certificate
active
07858536
ABSTRACT:
A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics.
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Eguchi Kazuhiro
Inumiya Seiji
Tsunashima Yoshitaka
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Gumedzoe Peniel M
Kabushiki Kaisha Toshiba
Lee Eugene
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