Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-08-30
2011-08-30
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S614000, C257SE21503, C257SE21510, C257SE21511, C257S776000
Reexamination Certificate
active
08008182
ABSTRACT:
A method for manufacturing a semiconductor device includes: a) preparing a structure including a semiconductor substrate, an electrode provided on a first surface of the semiconductor substrate, and an insulation film provided on the first surface and having an opening positioned on a first part of the electrode; b) forming a first metal layer from an upper surface of the first part of the electrode to an upper surface of the insulation film; c) forming a resin layer on a first part of the first metal layer, which is positioned on the first part of the electrode, and on the insulation film after the step b); d) removing at least a second part of the resin layer, which is positioned on the first part of the first metal layer, in a manner to leave a first part of the resin layer so as to form a resin protrusion; and e) forming a second metal layer, which is electrically connected with the electrode, from an upper surface of the first metal layer to an upper surface of the resin protrusion.
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Chang Leonard
Ghyka Alexander G
Harness & Dickey & Pierce P.L.C.
Seiko Epson Corporation
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