Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2006-09-05
2006-09-05
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S785000, C438S786000
Reexamination Certificate
active
07101775
ABSTRACT:
A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics.
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Notification for Filing Opinion issued by the Korean Patent Office, mailed Jan. 21, 2005 in counterpart Korean Application No. 10-2005-0003200, and English translation of Notification.
Copy of Japanese Patent Office Action mailed by the Japanese Patent Office on May 17, 2005 in counterpart Japanese Application No. 2002-001546.
Eguchi Kazuhiro
Inumiya Seiji
Tsunashima Yoshitaka
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