Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant
Reexamination Certificate
2006-09-19
2006-09-19
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Diffusing a dopant
C438S510000, C438S514000, C438S542000, C438S561000
Reexamination Certificate
active
07109100
ABSTRACT:
To provide a semiconductor device able to be made uniform in diffusion depth of the impurity in a diffusion layer by a single diffusion and to give the desired threshold voltage and improved in yield and a method of producing the same. The device has a channel layer16formed on a substrate12, a diffusion stop layer17formed on the top surface of the channel layer16, a diffusion layer18formed on the top surface of the diffusion stop layer, and a doping region25formed adjoining the diffusion stop layer17at least at part of the diffusion layer18and having an impurity diffused in it, the diffusion stop layer17having a slower diffusion rate of the impurity than the diffusion rate of the diffusion layer18and stopping diffusion of the impurity from the diffusion layer18.
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Baumeister B. William
Lee Jr. Granvill D
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