Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-04-19
2005-04-19
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S258000, C257S192000, C257S351000
Reexamination Certificate
active
06881657
ABSTRACT:
In a method for forming a semiconductor device, the major surface of a substrate is separated into a first element region for forming a first field-effect transistor and a second element region for forming a second field-effect transistor. A silicon nitride film is formed in each of the first and second element regions. Thereafter, the silicon nitride film formed in the second element region is removed, and the substrate is subjected to heat treatment in an ambient that contains nitrogen oxide. Thereby, the silicon nitride film in the first element region is oxidized to form an oxynitride film, and a silicon oxynitride film is formed in the second element region. Thereafter, a high-dielectric-constant film is formed on the silicon oxynitride films in each of the first and second element regions.
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Horiuchi Atsushi
Mitsuhashi Riichirou
Torii Kazuyoshi
Leydig , Voit & Mayer, Ltd.
Semiconductor Leading Edge Technologies Inc.
Smith Matthew
Yevsikov Victor V
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