Semiconductor device and method for making the same

Details Semiconductor device and method for making the same Semiconductor device and method for making the same

1996-09-11

1997-05-27

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438691, H01L 2176

Patent

active

056331908

ABSTRACT:
Disclosed is a semiconductor device in which dummy regions which are lower than an isolated element region are formed around the isolated element region. Another dummy region which has a height nearly equal to those of element regions may be formed at a non-element-region-existing region, accompanying with lower dummy regions. The method for making the semiconductor device has the steps of suitably forming the element regions and dummy regions on a insulating layer on a substrate, depositing a insulator on the entire surface of the insulating layer and polishing the insulator to obtain a plane surface.

REFERENCES:
patent: 4378630 (1983-04-01), Horng et al.
patent: 5120675 (1992-06-01), Pollack
H. Nishizawa et al., "Fully SiO.sub.2 Isolated High Speed Self-Aligned Bipolar Transistor on Thin SOI", 1991 Symposium on VLSI Technology, Digest of Technical Papers, pp. 51-52.

Affiliated with

Also associated with

Rating

Semiconductor device and method for making the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for making the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for making the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2328785